Plasma wave resonant detection of terahertz radiations by nanometric transistors
نویسندگان
چکیده
منابع مشابه
Non Resonant Response to Terahertz Radiation by Submicron CMOS Transistors
Experimental investigations on detection of terahertz radiation are presented. We used plasma wave instability phenomenon in nanometer Silicon field effect transistor. A 30 nm gate length transistor was illuminated by THz radiation at room temperature. We observe a maximum signal near to the threshold voltage. This result clearly demonstrates the possibility of plasma wave THz operation of thes...
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Modern microelectronics and nanoelectronics devices rely on the drift of electron localized at the interfaces between different materials, such silicon and silicon dioxide or gallium arsenide and aluminum gallium arsenide. Hence, the electron drift transit time in the active region of a device determines the maximum device speed. Instead of the electron drift, we propose to use the waves of the...
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Terahertz Detection of Quantum Cascade Laser Emission by Plasma Waves in Field Effect Transistors F. Teppea,∗, C. Consejo, J. Torres, B. Chenaud, P. Solignac, S. Fathololoumi, Z.R. Wasilewski, M. Zholudev, N. Dyakonova, D. Coquillat, A. El Fatimy, P. Buzatu, C. Chaubet and W. Knap L2C, UMR N◦ 5221 CNRS, Université Montpellier 2, GIS-TERALAB, 34095 Montpellier, France IES, UMR N◦ 5214 CNRS, Univ...
متن کاملTerahertz Emission and Detection by Plasma Waves in Nanometer Size Field Effect Transistors
Plasma oscillations in nanometer field effect transistors are used for detection and generation of electromagnetic radiation of THz frequency. Following first observations of resonant detection in 150 nm gate length GaAs HEMT, we describe recent observations of room temperature detection in nanometer Si MOSFETs, resonant detection in GaN/AlGaN HEMTs and improvement of room temperature detection...
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ژورنال
عنوان ژورنال: Low Temperature Physics
سال: 2007
ISSN: 1063-777X,1090-6517
DOI: 10.1063/1.2719970